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BYD Microelectronics Co., Ltd. BF90880SNL 80V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters
BYD Microelectronics Co., Ltd. BF9038DNS-A Dual N-Channel MOSFET General Description The BF9038DNS-A is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch. This device has ESD-protection and low resistance characteristics. Features • VDS (V
BYD Microelectronics Co., Ltd. BF90315SNS 30V N-Channel MOSFET General Description The BF90315SNS is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is applied in the electronic systems as a power switch. F
BYD Microelectronics Co., Ltd. BF9060BSNL 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters
DISCRETE SEMICONDUCTORS DATA SHEET BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 Philips Semiconductors Product specification N-channel dual gate MOS-FETs FEATURES • Specially designed for use at 5 V supply voltage �
BYD Microelectronics Co., Ltd. BF9035SNZ-M 30V N-Channel MOSFET General Description The BF9035SNZ-M is a Single N-channel MOS Field Effect Transistor, which uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This is applied to electronic systems as a power switch. F
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