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BYD Microelectronics Co., Ltd. BF910N60/BF910N60L 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior sw
BYD Microelectronics Co., Ltd. BF9100BSNL 100V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converter
BYD Microelectronics Co., Ltd. BF960NF06T 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters
BYD Microelectronics Co., Ltd. BF90880SNL 80V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters
BYD Microelectronics Co., Ltd. BF95N50T/BF95N50L 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior sw
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PartNumber.co.kr | 2020 | 연락처 |