파트넘버.co.kr BF900 데이터시트 검색

BF900 전자부품 데이터시트



BF900 전자부품 회로 및
기능 검색 결과



BF900  

Inter Control
Inter Control

BF900

Sicherungshalter

Type BF900 Sicherungshalter IEC 60127-6 250V 6,3A Bezeichnung / Kennzeichnung Bestellnummer MBL Isoliermaterial Kontakte Gewicht Nennstrom Nennspannung Verlustleistung (Tu < 40°C) Kontaktwiderstand Isolationswiderstand (Kontakte) Durchschlagfestigkeit Verpa




관련 부품 BF9 상세설명

BF910N60  

  
N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF910N60/BF910N60L 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior sw



BYD
BYD

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BF9100BSNL  

  
N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF9100BSNL 100V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converter



BYD
BYD

PDF



BF961  

  
Trans RF MOSFET N-CH 20V 0.03A 4-Pin TO-50



New Jersey Semiconductor
New Jersey Semiconductor

PDF



BF960NF06T  

  
N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF960NF06T 60V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters



BYD
BYD

PDF



BF90880SNL  

  
N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF90880SNL 80V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters



BYD
BYD

PDF



BF95N50L  

  
N-Channel MOSFET

BYD Microelectronics Co., Ltd. BF95N50T/BF95N50L 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using VDMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior sw



BYD
BYD

PDF




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