|
DISCRETE SEMICONDUCTORS DATA SHEET M3D067 BF583; BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low f
Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V operations and power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross mo
Silicon N-Channel MOSFET Tetrode • Designed for input stages of UHF- and VHF-tuners with AGC function • Supporting 5 V operations and power saving 3 V operations • Integrated ESD gate protection diodes • Very low noise figure • High gain, high forward transadmittance • Very good cross mo
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low feedback capacitance. APPLICATION
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF585; BF587 NPN high-voltage transistors Product specification Supersedes data of 1996 Dec 09 1999 Apr 21 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES • Low feedback capacitance. APPLICATION
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |