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DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field
NPN Silicon RF Transistor q BF 554 For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits Type BF 554 Marking CC Ordering Code (tape and reel) Q62702-F1042 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter v
DISCRETE SEMICONDUCTORS DATA SHEET BF550 PNP medium frequency transistor Product data sheet Supersedes data of 1999 Apr 15 2004 Jan 16 NXP Semiconductors PNP medium frequency transistor Product data sheet BF550 FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS �
BF 554 NPN High Frequency Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusem
DISCRETE SEMICONDUCTORS DATA SHEET BF556A; BF556B; BF556C N-channel silicon junction field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 29 Philips Semiconductors Product specification N-channel silicon junction field
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