BF1005S
Infineon Technologies AG
Silicon N-Channel MOSFET TetrodeSilicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005S...
AGC
RF Input
Drain
BF1005S
Siemens Semiconductor Group
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)BF 1005S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Markin
BF1005SR
Infineon Technologies AG
Silicon N-Channel MOSFET TetrodeSilicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005S...
AGC
RF Input
Drain
BF1005SW
Infineon Technologies AG
Silicon N-Channel MOSFET TetrodeBF1005S...
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network
Drain AGC HF Input G2 G1 HF Output + DC
GND
EHA07215
ESD: Electrostatic discharge sensitive