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Datasheet BF1005 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | BF1005 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BF 1005
Marking Ordering Code Pin Configuration |
 Siemens Semiconductor Group |
 |
| 7 | BF1005 | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrostat |
 Infineon Technologies AG |
|
| 6 | BF1005R | Silicon N-Channel MOSFET Tetrode Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled input stages up to 1 GHz
• Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101
BF1005...
AGC
RF Input
Drain RF Output G2 + DC G1
GND
ESD (Electrostat |
Infineon Technologies AG |
|
| 5 | BF1005S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) BF 1005S
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code Q62702-F1665
Pin Config |
Siemens Semiconductor Group |
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