BDY96D
Inchange Semiconductor
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification BDY96D
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A
APPLICATIONS
BDY90
(BDYxx) Silicon Transistorsw
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Advanced Semiconductor
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BDY98
Bipolar NPN DeviceBDY98
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max
Seme
PDF
BDY93
Bipolar NPN DeviceBDY93
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max
Seme LAB
PDF