BDY77
Semelab
Bipolar NPN Device
BDY77
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.06
BDY56
(BDYxx) Silicon Transistorsw
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Advanced Semiconductor
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BDY96D
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification BDY96D
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 350V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max.) @ IC= 2.5A
APPLICATIONS ·Designed for use in switching regulator
Inchange Semiconductor
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BDY55X
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY55X
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-100@IC = 4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.1 V(Max)@ IC = 4A
APPLICATIONS ·Designed for general-purpose switchin
Inchange Semiconductor
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BDY55X
Bipolar NPN DeviceBDY55X
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar NPN Device in a Hermetically sealed TO3
Metal Package.
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10
Seme LAB
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