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Datasheet BDY71 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
5 | BDY71 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY71
DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation-
: PC= 29W @TC= 25℃
APPLICATIONS ·Designed for general purpose switching and amplifier
applications.
ABSOLUTE MAXIMUM RATINGS |
Inchange Semiconductor |
|
4 | BDY71 | Bipolar NPN Device BDY71
Dimensions in mm (inches).
3.68 (0.145) rad.
max.
3.61 (0.142) 4.08(0.161)
rad.
12
6.35 (0.250) 8.64 (0.340)
Bipolar NPN Device in a Hermetically sealed TO66
Metal Package.
Bipolar NPN Device. VCEO = 55V IC = 4A
24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590)
0.71 (0.028) 0.86 (0 |
Seme LAB |
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3 | BDY71 | Trans GP BJT NPN 55V 4A 3-Pin(2+Tab) TO-66 |
New Jersey Semiconductor |
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2 | BDY71X | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDY71X
DESCRIPTION ·Continuous Collector Current-IC= 4A ·Collector Power Dissipation-
: PC= 29W @TC= 25℃
APPLICATIONS ·Designed for accordance with the requirements
of BS, CECC and JAN,JANTX, JANTXV and JANS sp |
Inchange Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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