BDY24
Comset Semiconductor
(BDY23 - BDY25)NPN SILICON TRANSISTORSBDY23, 180 T2 BDY24, 181 T2 BDY25, 182 T2 NPN SILICON TRANSISTORS, DIFFUSED MESA
LF Large Signal Power Amplification High Current Fast Switching
ABSOLUTE MAXIMUM RATINGS Symbol
VCEO VCBO VEBO IC IB PTOT TJ TStg
Collector-Emitter Voltage
Ratings
www.DataShee
BDY24
Inchange Semiconductor
Silicon NPN Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BDY24
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 90V(Min.) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max)@ IC = 2A ·High Switching Speed
APPL
BDY24B
Seme LAB
Bipolar NPN DeviceBDY24B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.
BDY24C
Seme LAB
Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageBDY24C
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.