Datasheet BDY23C Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	BDY23C	Bipolar NPN Device BDY23C Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma	Seme LAB

BDY Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
BDY29	HIGH POWER HIGH CURRENT TRANSISTOR	ETC
BDY20	Silicon NPN Power Transistor INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BDY20 DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain -hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1V(Max)@ IC = 4A APPLICATIONS ·Designed for general-p	Inchange Semiconductor
BDY90	HIGH CURRENT NPN SILICON TRANSISTOR BDY90 HIGH CURRENT NPN SILICON TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE APPLICATIONS LINEAR AND EQUIPMENT SWITCHING INDUSTRIAL DESCRIPTION The BDY90 is a silicon epitaxial planar NPN power transistors in Jedec TO-3 metal case. They are intented for use in switching and l	STMicroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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