BDX88
Seme LAB
Bipolar PNP Device in a Hermetically sealed TO3 Metal PackageBDX88
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9
BDX88
Inchange Semiconductor
Silicon PNP Darlington Power TransistorINCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -8
BDX88A
Inchange Semiconductor
Silicon PNP Darlington Power TransistorINCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -8
BDX88B
Seme LAB
Bipolar PNP DeviceBDX88B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.
BDX88B
Inchange Semiconductor
Silicon PNP Darlington Power TransistorINCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
BDX88/A/B/C
DESCRIPTION ·High DC Current Gain-
: hFE= 750(Min)@ IC= -6A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX88; -60V(Min)- BDX88A -8