BDX87
Seme LAB
Bipolar NPN DeviceBDX87
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9
BDX87
INCHANGE
Silicon NPN Darlington Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min
BDX87A
INCHANGE
Silicon NPN Darlington Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min
BDX87B
Seme LAB
Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageBDX87B
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.
BDX87B
INCHANGE
Silicon NPN Darlington Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX87/A/B/C
DESCRIPTION ·High DC Current Gain: hFE= 750(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 45V(Min)- BDX87; 60V(Min)- BDX87A 80V(Min