BDX67B
Seme LAB
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTORBDX67 BDX67A BDX67B BDX67C
MECHANICAL DATA Dimensions in mm
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR
9.0 max.
2. 5
26.6 max.
4.2
39.5 max.
B
30.1
E
20.3 max.
1 .0
NPN epitaxial base transistors in monolithic Darlington circuit for audio output stag
BDX67B
Comset Semiconductors
NPN SILICON DARLINGTONS POWER TRANSISTORBDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66,
BDX67B
SavantIC
SILICON POWER TRANSISTORSavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BDX67B
DESCRIPTION ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application.
PINNING