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Datasheet BDX20 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BDX20 | PNP SILICON TRANSISTORS EPITAXIAL BASE |
 ETC |
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| 3 | BDX20 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDX20
DESCRIPTION ·High Current Capability ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -140V(Min) ·High Switching Speed APPLICATIONS ·Designed for LF large signal power amplification. ABSOLUTE MAXIMUM RAT |
 Inchange Semiconductor |
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| 2 | BDX20 | Bipolar PNP Device BDX20
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar PNP Device in a Hermetically sealed TO3 Metal Package.
38.61 (1.52) 39.12 (1.54)
0.97 (0.060) 1.10 (0.043)
29.9 (1.177) 30.4 (1.197)
22.23 (0.875) max |
 Seme LAB |
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| 1 | BDX20 | PNP SILICON TRANSISTORS EPITAXIAL BASE PNP BDX20 SILICON TRANSISTORS EPITAXIAL BASE
The BDX20 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO VCEO VCEX VEBO IC IB PTOT TJ TS
Ratings
Collector to Base Vo |
 Comset Semiconductors |
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