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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F ·Complement
PNP BDT82 – BDT84 – BDT86 – BDT88 SILICON POWER TRANSISTORS The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60V(Min)- BDT81F; 80V(Min)- BDT83F; 100V(Min)- BDT85F; 120V(Min)- BDT87F ·Complement to T
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -60V(Min)- BDT82F; -80V(Min)- BDT84F; -100V(Min)- BDT86F; -120V(Min)- BDT88F ·Complement
PNP BDT82 – BDT84 – BDT86 – BDT88 SILICON POWER TRANSISTORS The BDT82 – BDT84 – BDT86 – BDT88 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. NPN complements are BDT81
NPN BDT81 – BDT83 – BDT85 – BDT87 SILICON POWER TRANSISTORS The BDT81 – BDT83 – BDT85 – BDT87 are epitaxial base transistors in a TO-220 plastic envelope. They are intended for use in audio output stages and general amplifier and switching appications. PNP complements are BDT82
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