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Datasheet BDT60B Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | BDT60B | PNP SILICON POWER DARLINGTONS |
 New Jersey Semi-Conductor |
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| 3 | BDT60B | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -100V(Min)- BDT60B; -120V(Min)- BDT60C
·C |
 Inchange Semiconductor |
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| 2 | BDT60B | PNP SILICON POWER DARLINGTONS |
 TRSYS |
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| 1 | BDT60B | PNP SILICON POWER DARLINGTONS BDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous Collector Current Minimum hFE of 750 at |
 Power Innovations Limited |
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