BDT60
Power Innovations Limited
PNP SILICON POWER DARLINGTONSBDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
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Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous
BDT60
Inchange Semiconductor
Silicon PNP Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -1
BDT60A
Power Innovations Limited
PNP SILICON POWER DARLINGTONSBDT60, BDT60A, BDT60B, BDT60C PNP SILICON POWER DARLINGTONS
Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Designed for Complementary Use with BDT61, BDT61A, BDT61B and BDT61C 50 W at 25°C Case Temperature 4 A Continuous
BDT60A
Inchange Semiconductor
Silicon PNP Power TransistorINCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistors
BDT60/A/B/C
DESCRIPTION ·DC Current Gain -hFE = 750(Min)@ IC= -1.5A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -60V(Min)- BDT60; -80V(Min)- BDT60A; -1