BDS12
Seme LAB
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGESLAB
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGE
BDS12
Inchange Semiconductor
Silicon NPN Power TransistorNCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS12
DESCRIPTION ·High Voltage: VCEV= 100V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A ·High Reliablity
APPLICATIONS ·Designed for power linear and switchin
BDS12IG
Seme LAB
SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGELAB
MECHANICAL DATA Dimensions in mm(inches)
10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430)
SEME
BDS10IG BDS11
BDS12SMD
Seme LAB
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGESLAB
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGE