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Datasheet BDS10IG Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BDS10IG | SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE LAB
MECHANICAL DATA Dimensions in mm(inches)
10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430)
SEME
BDS10IG BDS11IG BDS12IG
SILICON NPN EPITAXIAL BASE I |  Seme LAB | data |
BDS Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BDS10 | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES LAB
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
1.0
1 23
1 3 .7 0
• HIGH RELIABILI Seme LAB data | | |
| 2 | BDS10IG | SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE LAB
MECHANICAL DATA Dimensions in mm(inches)
10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430)
SEME
BDS10IG BDS11IG BDS12IG
SILICON NPN EPITAXIAL BASE I Seme LAB data | | |
| 3 | BDS10SMD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES LAB
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
1.0
1 23
1 3 .7 0
• HIGH RELIABILI Seme LAB data | | |
| 4 | BDS11 | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES LAB
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
1.0
1 23
1 3 .7 0
• HIGH RELIABILI Seme LAB data | | |
| 5 | BDS11IG | SILICON NPN EPITAXIAL BASE IN TO257 METAL PACKAGE LAB
MECHANICAL DATA Dimensions in mm(inches)
10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430)
SEME
BDS10IG BDS11IG BDS12IG
SILICON NPN EPITAXIAL BASE I Seme LAB data | | |
| 6 | BDS11SMD | SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES LAB
MECHANICAL DATA Dimensions in mm
1 0.6 0.8 4.6 16.5 3.6 Dia. 1 3 .5 1 0 .6
SEME
BDS10 BDS10SMD BDS11 BDS11SMD BDS12 BDS12SMD
SILICON NPN EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
FEATURES
• HERMETIC METAL OR CERAMIC PACKAGES
1.0
1 23
1 3 .7 0
• HIGH RELIABILI Seme LAB data | | |
| 7 | BDS12 | Silicon NPN Power Transistor NCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BDS12
DESCRIPTION ·High Voltage: VCEV= 100V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.0V(Max)@ IC= 5A ·High Reliablity
APPLICATIONS ·Designed for power linear and switching application and
General puepose power.  Inchange Semiconductor transistor | |
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