BD791 전자부품 데이터시트

ON Semiconductort NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gai

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD791/D NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. • High Collector–Emitter Sustaining Voltage �

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BD791 DESCRIPTION ·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitte