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BD5024 전자부품 데이터시트



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BD5024  

Won-Top Electronics
Won-Top Electronics

BD5024

50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 200nA BD5020, BD5024, BD5036 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE Pb Anode + C Mechanical Data  Case: 13mm Bo




관련 부품 BD50 상세설명

BD5036  

  
50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 200nA BD5020, BD5024, BD5036 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE Pb Anode + C Mechanical Data  Case: 13mm Bosch Type Press-Fit  Terminals: Contac



Won-Top Electronics
Won-Top Electronics

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BD5020  

  
50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE

® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Typical IR less than 200nA BD5020, BD5024, BD5036 50A AVALANCHE BOSCH TYPE PRESS-FIT DIODE Pb Anode + C Mechanical Data  Case: 13mm Bosch Type Press-Fit  Terminals: Contac



Won-Top Electronics
Won-Top Electronics

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BD50FC0  

  
35V Withstand Voltage 1A LDO Regulators

Datasheet Single-Output LDO Regulators 35V Withstand Voltage 1A LDO Regulators BDxxFC0 series ●Description The BDxxFC0 series are low-saturation regulators. The series’ output voltages are Variable, 3.0V, 3.3V, 5.0V, 6.0V, 7.0V, 8.0V, 9.0V, 10.0V, 12.0V and 15.0V and packages are HTSOP-J8, TO2



ROHM Semiconductor
ROHM Semiconductor

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BD506P  

  
50 AMP BLOCK DIODES

BD506N THRU BD506P 50 AMP BLOCK DIODES 特征 FEATURES .大电流承受能力.High current capability .高压利用能力.High voltage available .玻璃被钝化的压模结构.Glass passivated die construction .高浪涌承受能力.High surge current capability .50 A 工作在表面温度是 125



Shunye
Shunye

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BD506N  

  
50 AMP BLOCK DIODES

BD506N THRU BD506P 50 AMP BLOCK DIODES 特征 FEATURES .大电流承受能力.High current capability .高压利用能力.High voltage available .玻璃被钝化的压模结构.Glass passivated die construction .高浪涌承受能力.High surge current capability .50 A 工作在表面温度是 125



Shunye
Shunye

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BD501  

  
Silicon NPN Power Transistors

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD501/B DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 50V(Min) 80V(Min) ·High Power Dissipation APPLICATIONS ·Designed for use in high power audio amplifiers utilizing complementary or quasi com



INCHANGE
INCHANGE

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