BCW89
KEC
EPITAXIAL PLANAR PNP TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Super Mini Packaged Transistors for Hybrid circuits. For Complementary with NPN Type BCW71/72, BCV71.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base V
BCW89
Fairchild Semiconductor
PNP General Purpose AmplifierBCW89
BCW89
PNP General Purpose Amplifier
• This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 300mA. • Sourced from process 68.
3
2 1
SOT-23
Mark: H3
1. Base 2. Emitter 3. Collector
Absolu
BCW89
NXP Semiconductors
PNP general purpose transistorDISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D088
BCW89 PNP general purpose transistor
Product specification Supersedes data of 1997 Mar 11 1999 Apr 15
Philips Semiconductors
Product specification
PNP general purpose transistor
FEATURES • Low c
BCW89
Kexin
PNP General Purpose TransistorsSMD Type
TransistIoCrs
PNP General Purpose Transistors BCW89
Features
Low current (max. 100 mA). Low voltage (max. 60 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
C
BCW89
CDIL
SILICON PLANAR EPITAXIAL TRANSISTORSContinental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW89
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistors
Marking BCW89 = H3
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
BCW89
Central Semiconductor
SILICON PNP TRANSISTORSBCW89
SURFACE MOUNT PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW89 is a Silicon PNP Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for genera
BCW89
Diotec Semiconductor
Surface mount Si-Epitaxial PlanarTransistorsBCW 89 PNP
General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 1.1
PNP
250 mW SOT-23 (TO-236) 0.01 g
0.4
3
Plastic case Kuns