BCW78 전자부품 데이터시트

BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device

BCW69,70 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO v EBO THERMAL CHARACTERISTICS Characteristic *Total Device Dissipation, Ty = 25°C Derate

SEMICONDUCTOR TECHNICAL DATA LOW LEVEL AUDIO-AMPLIFIER AND SWITCHING. FEATURES Super Mini Packaged Transistor for Hybrid Circuits. For Complementary with PNP Type BCW69/70/89. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage BCW71/72 BCV71/72 VCBO Collector-Emitter Voltage

BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO VEBO •c BCW67 BCW68 32 45 45 60 5.0 800 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Symbol •Total Device ADissipation, T = 25°C D

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation BCW61B MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXI