BCW67B
Motorola Semiconductors
GENERAL PURPOSE TRANSISTORMAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO VEBO
•c
BCW67 BCW68
32 45 45 60
5.0
800
Unit Vdc Vdc Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
BCW67B
CDIL
GENERAL PURPOSE TRANSISTORContinental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW67, A, B, C BCW68, F, G, H
GENERAL PURPOSE TRANSISTOR
P–N–P transistor
Marking BCW67A = DA BCW67B = DB BCW67C = DC BCW68F = DF BCW68G
BCW67B
Multicomp
PNP General Purpose AmplifierFeatures: tFor general AF applications tHigh current gain tLow collector-emitter saturation voltage tComplementary types:BCW65,BCW66(NPN)
Applications: t and switching applications
BCW67/BCW68
Ordering Information
Type No. BCW67A/B/C BCW68F/G/H
Marking
BCW67B
Infineon Technologies AG
PNP Silicon AF TransistorsBCW67, BCW68
PNP Silicon AF Transistors
For general AF applications High current gain Low collector-emitter saturation voltage Complementary types: BCW65, BCW66 (NPN)
3
2 1
VPS05161
Type BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H
Maximum Ratings Para
BCW67B
Siemens Semiconductor Group
PNP Silicon AF Transistors (For general AF applications High current gain)PNP Silicon AF Transistors
BCW 67 BCW 68
For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN)
q
Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H
Marking DAs DBs DCs
BCW67B
Central Semiconductor
SILICON PNP TRANSISTORSBCW67 SERIES BCW68 SERIES
SURFACE MOUNT PNP SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW67 and BCW68 Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a
BCW67B
Diotec Semiconductor
Surface mount Si-Epitaxial PlanarTransistorsBCW 67, BCW 68 PNP
General Purpose Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
250 mW SOT-23 (TO-236) 0.01 g
1.1
Plastic ca
BCW67BCW68
Siemens Semiconductor Group
PNP Silicon AF Transistors (For general AF applications High current gain)PNP Silicon AF Transistors
BCW 67 BCW 68
For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary types: BCW 65, BCW 66 (NPN)
q
Type BCW 67 A BCW 67 B BCW 67 C BCW 68 F BCW 68 G BCW 68 H
Marking DAs DBs DCs