BCW66HR 전자부품 데이터시트

BL Galaxy Electrical NPN General Purpose Amplifier FEATURES z For general AF appilications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68(PNP) APPLICATIONS z General purpose medium power amplifier. z Switching appilication. Pro

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuratio

Features  BVCEO > 45V  IC = 800mA High Continuous Collector Current  Low Saturation Voltage VCE(sat) < 300mV @ 100mA  Complementary PNP Type: BCW68H  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-

Elektronische Bauelemente BCW66F / BCW66G / BCW66H 0.8A , 75V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Complementary to BCW68 MARKING Part Number BCW66F BCW66G BCW66H Marking Code EF EG EH PACKAGE INFORMATION Packag

BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuratio