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Datasheet BCW60C Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | BCW60C | GENERAL PURPOSE TRANSISTOR BCW60A,B,C,D
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol vCEO VCBO vEBO
'C
Characteristic
'Total De |
 Motorola Semiconductors |
 |
| 11 | BCW60C | NPN Transistor RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)
BCW60C
FEATURES
* Power dissipation
PCM :
0.25
W (Tamb=25OC)
* Collector current
ICM :
0.1 A
* Collector-base voltage
V(BR)CBO : 32
V
* Operating and storage junction temperature range
TJ,Tstg: -55 |
 RECTRON |
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| 10 | BCW60C | NPN TRANSISTOR RoHS BCW60C
SOT-23 Plastic-Encapsulate Transistors
BCW60C DFEATURES
TRANSISTOR (NPN)
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
TPower dissipation
1. 0
.,LPCM: 0.25 W (Tamb=25℃)
Collector current
ICM: 0.1 A
OCollector-base voltage
0. 4
0. 95
1. 9
2. 9
V(BR)CBO:
32 V
COperating and stora |
 WEJ |
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| 9 | BCW60C | Small Signal Transistors BCW60 Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Small Signal Transistors (NPN)
TO-236AB (SOT-23)
.122 (3.1) .110 (2.8) .016 (0.4)
3
Top View
.056 (1.43) .052 (1.33)
12 .037(0.95) .037(0.95)
Pin Configuration 1. Base 2. Emitter 3. Collector
Mounting Pad Layout
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 Vishay |
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