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BCW33 전자부품 데이터시트



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기능 검색 결과



BCW33  

Motorola Semiconductors
Motorola Semiconductors

BCW33

GENERAL PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO Vebo ic THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Derate above 25°C



BCW33  

Samsung semiconductor
Samsung semiconductor

BCW33

NPN EPITAXIAL SILICON TRANSISTOR




BCW33  

Fairchild Semiconductor
Fairchild Semiconductor

BCW33

NPN General Purpose Amplifier

BCW33 BCW33 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 07. 3 2 1 SOT-23 Mark: D3 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C u



BCW33  

Galaxy Microelectronics
Galaxy Microelectronics

BCW33

NPN General Purpose Amplifier

NPN General Purpose Amplifier FEATURES z Low current(max.100mA). z Low voltage(max.32V). Pb Lead-free Production specification BCW31/32/33 APPLICATIONS z General purpose switching and amplification. ORDERING INFORMATION Type No. Marking BCW31 BCW32 BCW



BCW33  

NXP Semiconductors
NXP Semiconductors

BCW33

NPN general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1997 Jan 29 1999 Apr 13 Philips Semiconductors Product specification NPN general purpose transistors FEA



BCW33  

Kexin
Kexin

BCW33

NPN General Purpose Transistors

SMD Type TransistIoCrs NPN General Purpose Transistors BCW31,BCW32,BCW33 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Paramete



BCW33  

Diotec Semiconductor
Diotec Semiconductor

BCW33

Surface mount Si-Epitaxial PlanarTransistors

BCW 31, BCW 32, BCW 33 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Pl



BCW33LT1  

Motorola  Inc
Motorola Inc

BCW33LT1

General Purpose Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW33LT1/D General Purpose Transistor NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER Symbol VCEO VCBO VEBO IC Value 20 30 5.0 100 Unit Vdc Vdc Vdc mAdc BCW33LT1 3 1 2 MAXIMUM RATINGS Rating Collector



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