BCW32
KEC
EPITAXIAL PLANAR NPN TRANSISTORSEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BCW29/30.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren
BCW32
Motorola Semiconductors
GENERAL PURPOSE TRANSISTORMAXIMUM RATINGS
Rating
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol VCEO VCBO Vebo
ic
THERMAL CHARACTERISTICS
Characteristic
Symbol
•Total Device Dissipation, Ta = 25°C Derate above 25°C
BCW32
Fairchild Semiconductor
NPN General Purpose AmplifierBCW32
BCW32
NPN General Purpose Amplifier
• This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10.
3
2 1
SOT-23
Mark: D2
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings * Ta=25°C u
BCW32
Galaxy Microelectronics
NPN General Purpose AmplifierNPN General Purpose Amplifier
FEATURES
z Low current(max.100mA). z Low voltage(max.32V).
Pb
Lead-free
Production specification
BCW31/32/33
APPLICATIONS
z General purpose switching and amplification.
ORDERING INFORMATION
Type No.
Marking
BCW31 BCW32 BCW
BCW32
NXP Semiconductors
NPN general purpose transistorsDISCRETE SEMICONDUCTORS
DATA SHEET
ok, halfpage
M3D088
BCW31; BCW32; BCW33 NPN general purpose transistors
Product specification Supersedes data of 1997 Jan 29 1999 Apr 13
Philips Semiconductors
Product specification
NPN general purpose transistors
FEA
BCW32
Kexin
NPN General Purpose TransistorsSMD Type
TransistIoCrs
NPN General Purpose Transistors BCW31,BCW32,BCW33
Features
Low current (max. 100 mA). Low voltage (max. 32 V).
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Paramete
BCW32
Diotec Semiconductor
Surface mount Si-Epitaxial PlanarTransistorsBCW 31, BCW 32, BCW 33 NPN
General Purpose Transistors NPN
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
250 mW SOT-23 (TO-236) 0.01 g
1.1
Pl