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BCW32 전자부품 데이터시트



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BCW32  

KEC
KEC

BCW32

EPITAXIAL PLANAR NPN TRANSISTOR

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Complementary to BCW29/30. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curren



BCW32  

Motorola Semiconductors
Motorola Semiconductors

BCW32

GENERAL PURPOSE TRANSISTOR

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol VCEO VCBO Vebo ic THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Derate above 25°C



BCW32  

Samsung semiconductor
Samsung semiconductor

BCW32

NPN EPITAXIAL SILICON TRANSISTOR




BCW32  

Fairchild Semiconductor
Fairchild Semiconductor

BCW32

NPN General Purpose Amplifier

BCW32 BCW32 NPN General Purpose Amplifier • This device is designed for general purpose applications at collector currents to 300mA. • Sourced from process 10. 3 2 1 SOT-23 Mark: D2 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta=25°C u



BCW32  

Galaxy Microelectronics
Galaxy Microelectronics

BCW32

NPN General Purpose Amplifier

NPN General Purpose Amplifier FEATURES z Low current(max.100mA). z Low voltage(max.32V). Pb Lead-free Production specification BCW31/32/33 APPLICATIONS z General purpose switching and amplification. ORDERING INFORMATION Type No. Marking BCW31 BCW32 BCW



BCW32  

NXP Semiconductors
NXP Semiconductors

BCW32

NPN general purpose transistors

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCW31; BCW32; BCW33 NPN general purpose transistors Product specification Supersedes data of 1997 Jan 29 1999 Apr 13 Philips Semiconductors Product specification NPN general purpose transistors FEA



BCW32  

Kexin
Kexin

BCW32

NPN General Purpose Transistors

SMD Type TransistIoCrs NPN General Purpose Transistors BCW31,BCW32,BCW33 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Paramete



BCW32  

Diotec Semiconductor
Diotec Semiconductor

BCW32

Surface mount Si-Epitaxial PlanarTransistors

BCW 31, BCW 32, BCW 33 NPN General Purpose Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 250 mW SOT-23 (TO-236) 0.01 g 1.1 Pl



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