BCV64B 전자부품 데이터시트

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 62 Type BCV 62 A BCV 62 B BCV 62 C Marking 3Js 3Ks 3Ls Ordering Code (tape and reel) Q62702-C2158 Q62702-C2159 Q62702

BCV62 PNP Silicon Double Transistor
To be used as a current mirror
Good thermal coupling and VBE matching
High current gain
Low collector-emitter saturation voltage C1 (2) C2 (1) 3 4 2 1 Tr.1 Tr.2 VPS05178 E1 (3) E2 (4) EHA00013 Type BCV62A BCV62B BCV62C Maximum Ratings Parameter Marki

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 62 Type BCV 62 A BCV 62 B BCV 62 C Marking 3Js 3Ks 3Ls Ordering Code (tape and reel) Q62702-C2158 Q62702-C2159 Q62702

NPN Silicon Double Transistor • To be used as a current mirror • Good thermal coupling and VBE matching • High current gain • Low collector-emitter saturation voltage • Pb-free (RoHS compliant) package • Qualified according AEC Q101 BCV61 3 4 2 1 C1 (2) C2 (1) Tr.1 Tr.2 Type BCV61

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BCV 61 B BCV 61 C Marking 1Js 1Ks 1Ls Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702

DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BCV64B PNP general purpose double transistor Product specification Supersedes data of 1997 Mar 10 1999 May 21 Philips Semiconductors Product specification PNP general purpose double transistor FEATURES • Low current (max. 100 mA) • Low voltage (m