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Datasheet BCV64 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BCV64 | PNP general purpose double transistor DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BCV64B PNP general purpose double transistor
Product specification Supersedes data of 1997 Mar 10 1999 May 21
Philips Semiconductors
Product specification
PNP general purpose double transistor
FEATURES • Low current (max. 100 mA) • Low voltage (m | NXP Semiconductors | transistor |
2 | BCV64B | PNP general purpose double transistor BCV64B
PNP general-purpose double transistor
Rev. 4 — 2 August 2010
Product data sheet
1. Product profile
1.1 General description
PNP general-purpose double transistor in a small SOT143B Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number
BCV64B
Package NXP SOT | NXP Semiconductors | transistor |
BCV Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BCV26 | PNP Darlington Transistors BCV26 / BCV46
PNP Darlington Transistors
for preamplifier input applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Stora SEMTECH transistor | | |
2 | BCV26 | PNP Darlington transistors DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BCV26; BCV46 PNP Darlington transistors
Product specification Supersedes data of 1997 Apr 23 1999 Apr 08
Philips Semiconductors
Product specification
PNP Darlington transistors
FEATURES • High current (max. 500 mA) • Low voltage (m NXP Semiconductors transistor | | |
3 | BCV26 | PNP SILICON PLANAR DARLINGTON TRANSISTORS SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995 FEATURES * Low saturation voltage COMPLEMENTARY TYPE PARTMARKING DETAILS BCV26 - BCV27 BCV46 - BCV47 BCV26 - ZFD BCV46 - ZFE SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg BCV46 MIN. MAX. -80 -60 -10 -100 -10 IEBO VCE(sat) Zetex Semiconductors transistor | | |
4 | BCV26 | PNP Silicon Darlington Transistors (For general AF applications High collector current) PNP Silicon Darlington Transistors
BCV 26 BCV 46
For general AF applications q High collector current q High current gain q Complementary types: BCV 27, BCV 47 (NPN)
q
Type BCV 26 BCV 46
Marking FDs FEs
Ordering Code (tape and reel) Q62702-C1493 Q62702-C1475
Pin Configuration 1 2 3 B E C
Pack Siemens Semiconductor Group transistor | | |
5 | BCV26 | PNP Darlington Transistor BCV26
Discrete POWER & Signal Technologies
BCV26
C
E
SOT-23
Mark: FD
B
PNP Darlington Transistor
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector Fairchild Semiconductor transistor | | |
6 | BCV26 | PNP Silicon Darlington Transistors BCV26, BCV46
PNP Silicon Darlington Transistors
For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 (NPN)
3
2 1
VPS05161
Type BCV26 BCV46
Maximum Ratings Parameter
Marking FDs FEs 1=B 1=B
Pin Configuration 2=E 2=E 3=C 3=C
Package SOT23 Infineon Technologies AG transistor | | |
7 | BCV26 | Surface mount Si-Epitaxial PlanarTransistors BCV26, BCV46 PNP
Darlington Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
250 mW SOT-23 (TO-236) 0.01 g
1.1
Plastic case Kunststoffgehäuse
1.3 Diotec Semiconductor transistor | |
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