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Datasheet BCR3AM Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | BCR3AM | LOW POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR3AM
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3AM
OUTLINE DRAWING
10 MAX 4 φ3.2±0.1
TYPE NAME VOLTAGE CLASS
Dimensions in mm
0.5
∗
4 MAX 12 MIN
1.2±0.1 0.8 0.8
8 MAX
3.2±0.2 23.7±0.5
2.5 2.5
4.5 MAX
1.5 MIN
0.5
123
1.55 |
 Mitsubishi Electric Semiconductor |
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| 4 | BCR3AM | Triac 3 Amperes/400-600 Volts BCR3AM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
3 Amperes/400-600 Volts
OUTLINE DRAWING
P
H - DIA.
C G
A D M N N F B
Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for eithe |
 Powerex Power Semiconductors |
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| 3 | BCR3AM-12 | Triac 3 Amperes/400-600 Volts BCR3AM
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
Triac
3 Amperes/400-600 Volts
OUTLINE DRAWING
P
H - DIA.
C G
A D M N N F B
Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for eithe |
Powerex Power Semiconductors |
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| 2 | BCR3AM-14B | Triac BCR3AM-14B
Triac
Low Power Use
Features
• IT (RMS) : 3 A • VDRM : 800 V (Tj = 125°C) • IFGT I, IRGT I, IRGT III : 30 mA
Outline
Preliminary
REJ03G1806-0100 Rev.1.00
Jul 22, 2009
• The Product guaranteed maximum junction temperature 150°C
• Planar Passivation Type
RENESAS Package code: |
 Renesas |
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