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MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME ∗ 3.0 –0.5 +0.3 0 –0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 1 2 3 24 2.6
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR12CS MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR12CS OUTLINE DRAWING Dimensions in mm 4 1.5 MAX 10.5 MAX 4.5 1.3 1.5 MAX 8.6±0.3 9.8±0.5 TYPE NAME ∗ 3.0 –0.5 +0.3 0 –0 +0.3 VOLTAGE CLASS 1 5 0.8 0.5 1 2 3 24 2.6
BCR12CM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 12 Amperes/400-600 Volts OUTLINE DRAWING C D E L A H F лG Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either pol
BCR12CM Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272 Triac 12 Amperes/400-600 Volts OUTLINE DRAWING C D E L A H F лG Description: A triac is a solid state silicon AC switch which may be gate triggered from an off-state to an on-state for either pol
BCR129.../SEMH4 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR129/F/L3 BCR129T/W C 3 BCR129S SEMH4 C1
BCR129.../SEMH4 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=10kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR129/F/L3 BCR129T/W C 3 BCR129S SEMH4 C1
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