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CYStech Electronics Corp. PNPN Epitaxial Planar SCR Spec. No. : C700A3 Issued Date : 2013.09.25 Revised Date Page No. : 1/6 BCR1003A3 Descriptions The BCR1003A3 is designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
BCR10LM-16LH Triac Medium Power Use Features • IT (RMS) : 10 A • VDRM : 800 V • IFGTI, IRGTI, IRGT III : 50 mA or 35 mA (IGT item:1) • High Commutation • Viso : 1800 V Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) Preliminary Datasheet R07DS0319EJ0100 Rev.1.00 May 18
BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type BCR 108W Marking Ordering Code WHs Q62702-C2275 Pin Configuration 1=B 2=E 3=C Package SOT-323 Maximum Ratings Parameter Collector-em
BCR108.../SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR108/F/L3 BCR108T/W C 3 BC
BCR 108S NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two (galvanic) internal isolated Transistors in on package • Built in bias resistor (R1=2.2kΩ, R2=47kΩ) Type BCR 108S Marking Ordering Code Pin Configuration WHs Package Q62
BCR108.../SEMH10 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor (R1 =2.2kΩ, R2=47kΩ) • For 6-PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR108/F/L3 BCR108T/W C 3 BC
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