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BCR08AS-12  

Renesas Technology
Renesas Technology

BCR08AS-12

TRIAC

BCR08AS-12 Triac Low Power Use REJ03G0292-0200 Rev.2.00 Mar 22, 2007 Features • • • • IT (RMS) : 0.8 A VDRM : 600 V IFGTI, IRGTI, IRGT : 5 mA IFGT : 10 mA • Non-Insulated Type • Planar Passivation Type • Completed Pb Free O




관련 부품 BCR08AS- 상세설명

BCR08AS-8  

  
TRIAC

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 2 3 0.8 MIN 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TER



Powerex Power Semiconductors
Powerex Power Semiconductors

PDF



BCR08AS-8  

  
TRIAC

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR08AS-8 LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE BCR08AS-8 OUTLINE DRAWING Dimensions in mm 4.4±0.1 1.6±0.2 1.5±0.1 2.5±0.1 1 2 3 0.8 MIN 0.5±0.07 0.4±0.07 1.5±0.1 1.5±0.1 (Back side) 2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TER



Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor

PDF




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