BCF33 전자부품 데이터시트

SMD Type Transistors IC PNP General Purpose Transistors BCF29,BCF30 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low current (max. 100 mA). Low voltage (max. 32 V). +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1

BCF240T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 2400 µm) The BeRex BCF240T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 2400 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-ga

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain

BCF060T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 600 µm) The BeRex BCF060T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 600 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain

BCF020T HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP (.3 µm x 200 µm) The BeRex BCF020T is a GaAs Power MESFET whose nominal 0.3 micron gate length and 200 micron gate width make the product ideally suited to applications requiring high OIP3 linearity and low phase noise while providing high-gain

SMD Type Transistors IC NPN General Purpose Transistors BCF81 SOT-23 Unit: mm Low current (max. 100 mA). +0.1 2.4-0.1 Low voltage (max. 45 V). +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Ba