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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC856AWT1/D General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. 1 BASE
Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25°C) -Collector current ICM: -0.1A -Collector-base voltage VCBO: BC856W= -80V BC857W= -50V BC858W=
BC856ALT1G Series General Purpose Transistors PNP Silicon Features http://onsemi.com • S and NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are
Elektronische Bauelemente BC856AW, BW BC857AW, BW, CW BC858AW, BW, CW FEATURES RoHS Compliant Product * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications * Operating Temp. : -55OC ~ +150OC A L C OLLE C TOR 3 1 B AS E 2 E MITTE R 3 1 2 3 Top View 12 VG BS
BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage BC856 BC857 BC858, BC859 -VCBO Collector Emitter Voltage BC856 BC857 BC85
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