BC849CW
NXP Semiconductors
NPN general purpose transistorsDISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D102
BC849W; BC850W NPN general purpose transistors
Product specification Supersedes data of 1997 Jun 20 1999 Apr 12
Philips Semiconductors
Product specification
NPN general purpose transistors
FEATUR
BC849CW
Siemens Semiconductor Group
NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)NPN Silicon AF Transistor
BC 846 W ... BC 850 W
Features
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For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30Hz and 15 kHz Complementary types: BC 856 W, BC 857 W, BC 858 W,BC
BC849CW
Infineon
NPN Silicon AF TransistorsNPN Silicon AF Transistors • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types:
BC857...-BC860...(PNP)
• Pb-free (RoHS compliant) pa
BC849CW
Taiwan Semiconductor
NPN TransistorSmall Signal Product
NPN Transistor
BC846AW - BC850CW
Taiwan Semiconductor
FEATURES
- Low reverse current, high reliability - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free versio