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Datasheet BC847S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | BC847S | DUAL TRANSISTOR JC(T
JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-363 Plastic-Encapsulate Transistors
BC847S DUAL TRANSISTOR (NPN+NPN)
APPLICATION This device is designed for general purpose amplifier applications
Marking :1C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value |
 JCET |
 |
| 9 | BC847S | NPN Transistor RoHS BC847S
Multi-Chip TRANSISTOR (NPN)
SOT-363
FEATURES Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector current
.,LICM : 200 mA
Collector-base voltage
V(BR)CBO : 50
V
Operating and storage junction temperature range
OTJ,Tstg: -55℃to +150℃ CMARKING: 1C
ELECTRICAL CHARACTERIST |
 WILLAS |
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| 8 | BC847S | NPN Multi-Chip General Purpose Amplifier SMD Type
Transistors
NPN Multi-Chip General Purpose Amplifier KC847S(BC847S)
Features
High current gain Low collector-emitter saturation voltage
SOT-363
1.3+0.1 -0.1 0.65
Unit: mm
0.525
+0.11.25 -0.1
+0.152.3 -0.15
0.36
0.3+0.1 -0.1
2.1+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter |
 Kexin |
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| 7 | BC847S | Dual General Purpose Transistor Dual General Purpose Transistor NPN Silicon
P b Lead(Pb)-Free
Maximum Ratings
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous
Thermal Characteristics
Characteristics
Total Device Dissipation TA=25 C Junction Temperature
Storage Temperature
D |
 WEITRON |
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