BC808-40
RFE
GENERAL PURPOSE TRANSISTORSGENERAL PURPOSE TRANSISTORS
RoHS
BC808 (25, 40) PNP
SOT-23
FEATURES
• S Prefix for automotive and other applications requiring unique site and control change
• AEC-Q101 Qualified and PPAP Capable
COLLECTOR 3
1 BASE
2 EMITTER
Collector
Base Emitter
BC808-40
Galaxy Microelectronics
PNP General Purpose AmplifierBL Ga
PNP General Purpose Amplifier
FEATURES
z High collector current. z High current gain. z Low collector-emitter stauration voltage. z Complementary types:BC818.
Pb
Lead-free
Production specification
BC808-16/-25/-40
ORDERING INFORMATION
Type No.
Mar
BC808-40
LITE-ON
PNP General Purpose TransistorPNP General Purpose Transistor
BC808
FEATURES
• Suitable for AF-Driver stages and low power output
stages
MECHANICAL DATA
• Case: SOT-23 Plastic • Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
• Le
BC808-40
Infineon
PNP Silicon AF TransistorPNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type:
BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified ac
BC808-40
Siemens Semiconductor Group
PNP Silicon AF Transistors (For general AF applications High collector current High current gain)PNP Silicon AF Transistors
BC 807 BC 808
q q q q q
For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC 817, BC 818 (NPN)
Type BC 807-16 BC 807-25 BC 807-40 BC 808-16 BC 808-2
BC808-40
Unisonic Technologies
PNP SILICON TRANSISTORUNISONIC TECHNOLOGIES CO., LTD
BC807/BC808
PNP SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATIONS
FEATURES
* Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818
ORDERING INFORMATION
Ordering Number
Packag
BC808-40
CDIL
SILICON PLANAR EPITAXIAL TRANSISTORSContinental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BC807 BC808
SILICON PLANAR EPITAXIAL TRANSISTORS
P–N–P transistor
Marking BC807 = 5D BC807–16 = 5A BC807–25 = 5B BC807-40 = 5C BC808
BC808-40
Diotec Semiconductor
Surface mount Si-Epitaxial PlanarTransistorsBC 807 / BC 808 PNP
General Purpose Transistors PNP
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung
2.9 ±0.1 0.4
3
310 mW SOT-23 (TO-236) 0.01 g
1.1
Plastic c