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PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BC807.../BC808... Typ
Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction Complementary NPN Types Available (BC817-xxW) For Switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS Compliant (Note 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3)
BC 807W / BC 808W PNP General Purpose Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 2±0.1 0.3 3 225 mW SOT-323 0.01 g 1±0.1 1.25±0.1 Plastic case Kunststoffgehäuse Weight approx
BC 807-16W PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary types: BC817W, BC818W (NPN) Type BC 807-16W BC 807-25W BC 807-40W BC 808-16W BC 808-25W BC 808-40W Marking Ordering C
PNP Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emitter saturation voltage • Complementary type: BC817.../W, BC818.../W (NPN) • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BC807.../BC808... Typ
UNISONIC TECHNOLOGIES CO., LTD BC807/BC808 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to BC817 / BC818 ORDERING INFORMATION Ordering Number Package Note: BC807G-xx-AE3-R BC807G-xx-AL3-
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