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Datasheet BC636 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | BC636 | SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR EPITAXIAL TRANSISTORS
BC635, 637, 639 NPN BC636, 638, 640 PNP
TO-92 Plastic Package
For Lead Free Parts, Device Part # will be Prefixed with "T"
ECB
High Current Transistor
ABSOLUTE MAXIMUM |
 CDIL |
 |
| 10 | BC636 | PNP Type Plastic Encapsulate Transistors Elektronische Bauelemente
BC636/638/640
PNP Type
Plastic Encapsulate Transistors
FEATURE
Power Dissipation: PCM: 0.83 mW (Tamb=25oC)
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
4.5±0.2
TO-92
4.55±0.2
3.5±0.2
14.3±0.2
MAXIMUM RATINGS (TA=25 oC unless otherwise s |
 SeCoS |
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| 9 | BC636 | High Current Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BC636/D
High Current Transistors
PNP Silicon
COLLECTOR 2 3 BASE 1 EMITTER
BC636 BC638 BC640
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Tota |
 Motorola Inc |
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| 8 | BC636 | High Current Transistors(PNP Silicon) BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors
PNP Silicon
http://onsemi.com
MAXIMUM RATINGS
Rating Collector-Emitter Voltage BC636 BC638 BC640 Collector-Base Voltage BC636 BC638 BC640 Emitter-Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Dera |
 ON Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
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