BC338-40
Motorola Inc
Amplifier TransistorBC 337 / BC 338 NPN Si-Epitaxial PlanarTransistors
General Purpose Transistors NPN 625 mW TO-92 (10D3) 0.18 g
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Ge
BC338-40
ON Semiconductor
Amplifier Transistors(NPN Silicon)MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document by BC337/D
NPN Silicon
COLLECTOR 1 2 BASE 3 EMITTER
BC337,-16,-25,-40 BC338,-16,-25,-40
MAXIMUM RATINGS
Rating Collector – Emitter Voltage Collector – Base Voltage Emitter
BC338-40
MCC
NPN Plastic-Encapsulate TransistorsMCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage
BC338-40
Siemens
NPN Silicon AF TransistorsNPN Silicon AF Transistors
q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP)
BC 337 BC 338
2 3
1
Type
BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40
BC338-40
JCET
NPN TransistorJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
BC338-40
Taiwan Semiconductor
NPN TransistorSmall Signal Product
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
NPN Transistor
FEATURES
- For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture se
BC338-40
JIANGSU CHANGJIANG
NPN TransistorJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
BC338-40
Diotec Semiconductor
Si-Epitaxial PlanarTransistorsNPN Silicon AF Transistors
BC 337 BC 338
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP)
q 2 1 3
Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40