BC338-25
Motorola Inc
Amplifier TransistorBC 337 / BC 338 NPN Si-Epitaxial PlanarTransistors
General Purpose Transistors NPN 625 mW TO-92 (10D3) 0.18 g
Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Ge
BC338-25
ON Semiconductor
Amplifier Transistors(NPN Silicon)BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors
NPN Silicon
http://onsemi.com Features
COLLECTOR 1 2 BASE Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 BC337 45 50 5.0 800 BC338 25 30 Unit Vdc Vdc Vdc mAdc mW
BC338-25
MCC
NPN Plastic-Encapsulate TransistorsMCC TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
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Features
x Capable of 0.625Watts of Power Dissipation. x Collector-current 0.8A x Collector-base Voltage
BC338-25
Siemens
NPN Silicon AF TransistorsNPN Silicon AF Transistors
q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP)
BC 337 BC 338
2 3
1
Type
BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40
BC338-25
JCET
NPN TransistorJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
BC338-25
Taiwan Semiconductor
NPN TransistorSmall Signal Product
BC337-16/25/40 thru BC338-16/25/40
Taiwan Semiconductor
NPN Transistor
FEATURES
- For switching and AF amplifier applications - These types are subdivided into three groups -16, -25 and -40, according to their current gain - Moisture se
BC338-25
JIANGSU CHANGJIANG
NPN TransistorJIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
BC337,-16,-25,-40 TRANSISTOR (NPN)
BC338, -16,-25,-40
TO-92
FEATURES Power dissipation
1. COLLECTOR
PCM: 0.625 W (Tamb=25℃)
2. BASE
Collector current
ICM: 0.8 A
BC338-25
Diotec Semiconductor
Si-Epitaxial PlanarTransistorsNPN Silicon AF Transistors
BC 337 BC 338
High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP)
q 2 1 3
Type BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338 BC 338-16 BC 338-25 BC 338-40