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BB506M Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1604-0100 Rev.1.00 Nov 26, 2007 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low
BB506C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1246-0100 Rev.1.00 Jun. 27, 2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low
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BB503M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-811B(Z) 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD
BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-812B(Z) 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD
BB503C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-812B(Z) 3rd. Edition Jul. 1999 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD
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