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BB304M 전자부품 데이터시트



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기능 검색 결과



BB304M  

Hitachi
Hitachi

BB304M

Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB304M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-605C (Z) 4th. Edition August 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; (PG = 29 dB typ. at f = 200 MHz) • Low noise charact




관련 부품 BB30 상세설명

BB305M  

  
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305M Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-607C (Z) 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply v



Hitachi
Hitachi

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BB305C  

  
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier

BB305C Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier ADE-208-608C (Z) 4th. Edition May 1998 Features • • • • Build in Biasing Circuit; To reduce using parts cost & PC board space. Superior cross modulation characteristics. High gain; (PG = 28 dB typ. at f = 200 MHz) Wide supply v



Hitachi
Hitachi

PDF



BB302M  

  
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-572 A (Z) 2nd. Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorb



Hitachi
Hitachi

PDF



BB302C  

  
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB302C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-573 A (Z) 2nd. Edition September 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorb



Hitachi
Hitachi

PDF



BB301M  

  
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301M Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-506 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand



Hitachi
Hitachi

PDF



BB301  

  
Build in Biasing Circuit MOS FET IC UHF RF Amplifier

BB301C Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-507 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz) • Withstanding to ESD; Build in ESD absorbing diode . Withstand



Hitachi
Hitachi

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