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BB102M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-587 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing
BB102C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-588 (Z) 1st. Edition November 1997 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing
BB101C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-505 1st. Edition Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD; Build in ESD absorbing diode. Withstand
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/
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