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Datasheet BAV70T Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 19 | BAV70T | SWITCHING DIODE Transys
Electronics
LIMITED
SOT-523 Plastic-Encapsulated Diodes
BAS16T/BAW56T/BAV70T/BAV99T
SWITCHING DIODE
FEATURES
Power dissipation
PD: 150 mW (Tamb=25℃)
Forward Current
IF: Reverse Voltage
75 m A
VR: 85 V Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
SO |
 Transys |
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| 18 | BAV70T | SILICON EPITAXIAL PLANAR DIODE SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.9V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=0.9pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum ( |
 KEC |
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| 17 | BAV70T | Switching Diodes MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
• Halogen free available upon request by adding suffix "-HF" x Ultra-Small Surface Mount Package x For General Purpose Switching Appl |
 MCC |
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| 16 | BAV70T | Switching Diode BAW56T/BAV70T/BAV99T
Switching Diode SOT-523
Features
Fast Switching Speed For General Purpose Switching Applications High Conductance
Dimensions in inches and (millimeters)
BAW56T Marking: JD BAV70T Marking: JJ
BAV99T Marking: JE
Maximum Ratings @TA=25℃
Parameter Reverse voltage Fo |
 LGE |
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