Datasheet BAV199W Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BAV199W	LOW LEAKAGE SWITCHING DIODES DATA SHEET BAS116W/BAW156W/BAV170W/BAV199W SURFACE MOUNT, LOW LEAKAGE SWITCHING DIODES VOLTAGE 100 Volts POWER 200mWatts SOT-323 FEATURES • Suface mount package ideally suited for automatic insertion. • Very low leakage current. 2pA typical at VR=75V. • Low capacitance. 4pF max at VR=0V,	Pan Jit International	diode
2	BAV199W	LOW LEAKAGE DOUBLE DIODE BAV199W LOW LEAKAGE DOUBLE DIODE For low leakage current applications Feature • Very low leakage current • Medium speed switching times 3 12 Marking Code: JY Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Repetitive Reverse Voltage Continuous Reverse Voltage Continuous Forward Curren	SEMTECH	diode
3	BAV199W	Low-leakage double diode DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 BAV199W Low-leakage double diode Product speciﬁcation Supersedes data of 1998 Jan 09 1999 May 11 Philips Semiconductors Product speciﬁcation Low-leakage double diode FEATURES • Small plastic SMD package • Low leakage current: typ	NXP Semiconductors	diode
4	BAV199W	DUAL SURFACE MOUNT LOW LEAKAGE DIODE Features • Surface Mount Package Ideally Suited for Automated Insertion • Suitable for ultra-low leakage current applications, including high-precision instrumentation and portable electronics • Lead Free By Design/RoHS Compliant (Note 1) • Halogen and Antimony Free "Green" Device (Notes 2 &	Diodes Incorporated	diode
5	BAV199W	DUAL SURFACE MOUNT LOW LEAKAGE DIODE UNISONIC TECHNOLOGIES CO., LTD BAV199W DUAL SURFACE MOUNT LOW LEAKAGE DIODE  DESCRIPTION The UTC BAV199W is a dual surface mount diode providing the designers with extremely low leakage current. The UTC BAV199W is suitable for automatic insertion.  FEATURES * Extremely Low Leakage Current DIO	Unisonic Technologies	diode

BAV Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BAV10	High-speed diode DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAV10 High-speed diode Product speciﬁcation Supersedes data of April 1996 1996 Sep 16 Philips Semiconductors Product speciﬁcation High-speed diode FEATURES • Hermetically sealed leaded glass SOD27 (DO-35) package • High switching speed: max. 6	NXP Semiconductors	diode
2	BAV100	Silicon Epitaxial Planar Diodes	SURGE	diode
3	BAV100	Hermetically Sealed Glass High Voltage Switching Diodes Small Signal Product CREAT BY ART BAV100/101/102/103 Taiwan Semiconductor Hermetically Sealed Glass High Voltage Switching Diodes FEATURES - High voltage switching device - Ideal for automated placement - Hermetically sealed glass - Compression bonded construction - All external surfaces are cor	Taiwan Semiconductor	diode
4	BAV100	Small Signal Diodes MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) • Moisture Sensitivity Leve	MCC	diode
5	BAV100	HIGH SPEED SILICON DIODES Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company HIGH SPEED SILICON DIODES BAV100, BAV101 BAV102, BAV103 SOD - 80C Mini MELF (LL- 34 ) Polarity: Cathode is indicated by a white band Hermetically Sealed, Glass Silicon Diodes Intended for Switching and Gener	CDIL	diode
6	BAV100	Surface Mount Small Signal Switching Diode Elektronische Bauelemente BAV100 ~ BAV103 Surface Mount Small Signal Switching Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  SOD-80 (Mini-MELF) Package  Surface Device Type Mounting  Hermetically Sealed Glass  Compression Bonded Construction	SeCoS	diode
7	BAV100	Ultrafast silicon rectifier diodes BAV 100...BAV 103 Surface mount diode Ultrafast silicon rectifier diodes BAV 100...BAV 103 Forward Current: 0,2 A Reverse Voltage: 50 to 300 V Features !"#$ % & & ' ' ' ( & )	Semikron	rectifier

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Número de pieza	Descripción	Fabricantes	PDF
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