BAS19LT1
WEJ
DIODESWITCHING DIODE
RoHS
BAS19LT1
Features
Power dissipation PD : 225 mW (Tamb=25 C)
Pluse Drain
DIF : 200 mA TReverse Voltage
VR : 120V
.,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C
1
1.
2.4 1.3
SOT-23
3
2 1.BASE 2.EMITTER 3.
BAS19LT1
ON Semiconductor
High Voltage Switching Diode
BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1
Preferred Devices
High Voltage Switching Diode
Features
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating Continuous Reverse Voltage BAS19 BAS20 BAS21 Repetitive Peak Reverse Voltage BAS
BAS19LT1
Motorola Semiconductors
High Voltage Switching DiodeMOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BAS19LT1/D
High Voltage Switching Diode
3 CATHODE 1 ANODE
BAS19LT1
Motorola Preferred Device
MAXIMUM RATINGS
Rating Continuous Reverse Voltage Peak Forward Current Peak Forw